P-Channel NexFET™ Power MOSFET, surface mountable in a 4-DSBGA package. Features 12V Drain to Source Breakdown Voltage (Vdss) and 2.2A Continuous Drain Current (ID). Offers low 82mR Drain to Source Resistance (Rds On Max) and 325pF Input Capacitance. Operates across a wide temperature range of -55°C to 150°C with a 1W maximum power dissipation. Includes 24ns Turn-On Delay Time and 29ns Fall Time.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Texas Instruments CSD23201W10 technical specifications.
General
| Package/Case | BGA |
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 12V |
| Dual Supply Voltage | 12V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | -6V |
| Input Capacitance | 325pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD23201W10 Datasheet
Download the complete datasheet for Texas Instruments CSD23201W10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.