P-Channel NexFET™ Power MOSFET, surface mountable in a 4-DSBGA package. Features 12V Drain to Source Breakdown Voltage (Vdss) and 2.2A Continuous Drain Current (ID). Offers low 82mR Drain to Source Resistance (Rds On Max) and 325pF Input Capacitance. Operates across a wide temperature range of -55°C to 150°C with a 1W maximum power dissipation. Includes 24ns Turn-On Delay Time and 29ns Fall Time.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1W
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Technical Specifications
Texas Instruments CSD23201W10 technical specifications.
General
Package/Case
BGA
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
12V
Dual Supply Voltage
12V
Fall Time
29ns
Gate to Source Voltage (Vgs)
-6V
Input Capacitance
325pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
82mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
600mV
Turn-Off Delay Time
68ns
Turn-On Delay Time
24ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD23201W10 Datasheet
Download the complete datasheet for Texas Instruments CSD23201W10 to view detailed technical specifications.
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