P-Channel NexFET™ Power MOSFET designed for efficient power management. Features a continuous drain current of 4A and a drain-to-source breakdown voltage of -20V. Offers low on-resistance with a maximum of 40mΩ at a nominal gate-source voltage of -700mV. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a 9-DSBGA surface-mount package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Texas Instruments CSD25201W15 technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | -6V |
| Input Capacitance | 510pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD25201W15 Datasheet
Download the complete datasheet for Texas Instruments CSD25201W15 to view detailed technical specifications.
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