P-Channel NexFET™ Power MOSFET designed for efficient power management. Features a continuous drain current of 4A and a drain-to-source breakdown voltage of -20V. Offers low on-resistance with a maximum of 40mΩ at a nominal gate-source voltage of -700mV. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a 9-DSBGA surface-mount package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Texas Instruments CSD25201W15 technical specifications.
General
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
33mR
Drain to Source Voltage (Vdss)
20V
Fall Time
38ns
Gate to Source Voltage (Vgs)
-6V
Input Capacitance
510pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-700mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
-700mV
Turn-Off Delay Time
51ns
Turn-On Delay Time
9.5ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD25201W15 Datasheet
Download the complete datasheet for Texas Instruments CSD25201W15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.