P-Channel NexFET™ Power MOSFET featuring a 20V Drain to Source Breakdown Voltage and 75mΩ Drain to Source Resistance. Continuous Drain Current (ID) is 2.2A with a maximum power dissipation of 1.5W. Operating temperature range spans from -55°C to 150°C. Surface mountable in a 6-DSBGA package, it offers fast switching with a 4ns turn-on delay and 12ns fall time. Contact plating includes Copper, Tin, and Silver.
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Texas Instruments CSD25301W1015 technical specifications.
General
Contact Plating
Copper, Tin, Silver
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
270pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
750mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Rds On Max
75mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Turn-Off Delay Time
29ns
Turn-On Delay Time
4ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD25301W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD25301W1015 to view detailed technical specifications.
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