P-channel Power MOSFET with NexFET technology, featuring a 20V drain-source voltage and 5A continuous drain current. This single-element transistor is housed in a compact 6-pin SON package (2mm x 2mm x 0.75mm max) for surface mounting. It offers a low drain-source on-resistance of 49 mOhm at 4.5V gate-source voltage and a typical gate charge of 2.6 nC. Operating temperature range spans from -55°C to 150°C.
PackageSON
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD25302Q2 technical specifications.
General
Package Family Name
SON
Package/Case
SON
Package Description
Small Outline No Lead Package
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
2
Package Height (mm)
0.75(Max)
Seated Plane Height (mm)
0.8(Max)
Mounting
Surface Mount
Configuration
Single Quad Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
5A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
270@10VpF
Maximum Power Dissipation
2400mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD25302Q2 Datasheet
Download the complete datasheet for Texas Instruments CSD25302Q2 to view detailed technical specifications.
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