P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.
PackageDSBGA
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD75205W1015 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
DSBGA
Package Description
Die Size Ball Grid Array
Lead Shape
Ball
Pin Count
6
PCB
6
Package Length (mm)
1.3
Package Width (mm)
1.8
Package Height (mm)
0.65
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.5
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Process Technology
NexFET
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
-6V
Maximum Continuous Drain Current
1.2A
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
205@10VpF
Maximum Power Dissipation
750mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Texas Instruments CSD75205W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD75205W1015 to view detailed technical specifications.
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