P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.
PackageDSBGA
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD75205W1015 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | DSBGA |
| Package Description | Die Size Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.3 |
| Package Width (mm) | 1.8 |
| Package Height (mm) | 0.65 |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | -6V |
| Maximum Continuous Drain Current | 1.2A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 205@10VpF |
| Maximum Power Dissipation | 750mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Texas Instruments CSD75205W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD75205W1015 to view detailed technical specifications.
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