P-channel power MOSFET featuring 20V drain-source breakdown voltage and 4.5A continuous drain current. Offers low 39mΩ drain-to-source resistance at a nominal Vgs of -700mV. Designed for surface mount applications with a compact 1.70 x 2.30 mm BGA package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with a 1.6ns fall time and 3.7ns turn-on delay.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Texas Instruments CSD75211W1723 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
39mR
Drain to Source Voltage (Vdss)
20V
Fall Time
1.6ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
600pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-700mV
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
-700mV
Turn-Off Delay Time
9.1ns
Turn-On Delay Time
3.7ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD75211W1723 Datasheet
Download the complete datasheet for Texas Instruments CSD75211W1723 to view detailed technical specifications.
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