P-channel power MOSFET featuring 20V drain-source breakdown voltage and 4.5A continuous drain current. Offers low 39mΩ drain-to-source resistance at a nominal Vgs of -700mV. Designed for surface mount applications with a compact 1.70 x 2.30 mm BGA package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with a 1.6ns fall time and 3.7ns turn-on delay.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Texas Instruments CSD75211W1723 technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1.6ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 600pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 9.1ns |
| Turn-On Delay Time | 3.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD75211W1723 Datasheet
Download the complete datasheet for Texas Instruments CSD75211W1723 to view detailed technical specifications.
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