P-Channel Dual Common Source NexFET™ Power MOSFET designed for efficient power management. Features a 20V Drain to Source Breakdown Voltage and a low 100mΩ Drain to Source Resistance. Offers a continuous drain current of 1.2A with a maximum power dissipation of 800mW. Operates across a wide temperature range from -55°C to 150°C, suitable for demanding applications. Includes fast switching characteristics with a 3ns turn-on delay and 16ns fall time. Surface mountable in a 6-DSBGA package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power800mW
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Technical Specifications
Texas Instruments CSD75301W1015 technical specifications.
General
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 195pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Nominal Vgs | -700mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 3ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD75301W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD75301W1015 to view detailed technical specifications.
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