P-Channel Dual Common Source NexFET™ Power MOSFET designed for efficient power management. Features a 20V Drain to Source Breakdown Voltage and a low 100mΩ Drain to Source Resistance. Offers a continuous drain current of 1.2A with a maximum power dissipation of 800mW. Operates across a wide temperature range from -55°C to 150°C, suitable for demanding applications. Includes fast switching characteristics with a 3ns turn-on delay and 16ns fall time. Surface mountable in a 6-DSBGA package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power800mW
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Technical Specifications
Texas Instruments CSD75301W1015 technical specifications.
General
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
20V
Fall Time
16ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
195pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Nominal Vgs
-700mV
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
800mW
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
-700mV
Turn-Off Delay Time
38ns
Turn-On Delay Time
3ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD75301W1015 Datasheet
Download the complete datasheet for Texas Instruments CSD75301W1015 to view detailed technical specifications.
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