Automotive-grade half-bridge gate driver for GaNFET and MOSFET applications. Features 1.5-A and 3-A peak output current, 200-V high-side and low-side voltage capability, and 5-V undervoltage lockout (UVLO). Offers programmable dead-time control for optimized switching performance. Operates across a -40°C to 125°C temperature range. Housed in a 19-WQFN package with a 4mm x 3mm footprint.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Texas Instruments LMG1210RVRT datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 125 |
| Number of Terminals | 19 |
| Min Operating Temperature | -40 |
| Terminal Position | QUAD |
| JEDEC Package Code | R-PQCC-N19 |
| Width | 3 |
| Length | 4 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 5 |
| Supply Voltage-Min | 4.75 |
| Supply Voltage-Max | 5.25 |
| Interface IC Type | HALF BRIDGE BASED PERIPHERAL DRIVER |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Texas Instruments LMG1210RVRT to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
