Automotive-grade half-bridge gate driver for GaNFET and MOSFET applications. Features 1.5-A and 3-A peak output current, 200-V high-side and low-side voltage capability, and 5-V undervoltage lockout (UVLO). Offers programmable dead-time control for optimized switching performance. Operates across a -40°C to 125°C temperature range. Housed in a 19-WQFN package with a 4mm x 3mm footprint.
Quick Jump:
Technical Specifications
Texas Instruments LMG1210RVRT technical specifications.
General
| Max Operating Temperature | 125 |
| Number of Terminals | 19 |
| Min Operating Temperature | -40 |
| Terminal Position | QUAD |
| JEDEC Package Code | R-PQCC-N19 |
| Width | 3 |
| Length | 4 |
| Number of Functions | 1 |
| Temperature Grade | AUTOMOTIVE |
| Supply Voltage-Nom | 5 |
| Supply Voltage-Min | 4.75 |
| Supply Voltage-Max | 5.25 |
| Interface IC Type | HALF BRIDGE BASED PERIPHERAL DRIVER |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Texas Instruments LMG1210RVRT Datasheet
Download the complete datasheet for Texas Instruments LMG1210RVRT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.