11.3Gbps rate-selectable limiting amplifier with 9GHz bandwidth and 34dB voltage gain. Features a 3.3V operating supply voltage, 50mA supply current, and 170mW power dissipation. Designed for telecom applications, this IC operates within a -40°C to 100°C temperature range and is housed in a VQFN EP package. It offers a minimum input voltage of 5mV and a minimum output voltage of 250mV, with a maximum input voltage of 2V.
PackageVQFN EP
Current50mA
Power170mW
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Technical Specifications
Texas Instruments ONET8501PBRGTT technical specifications.
General
| -3db Bandwidth | 9GHz |
| Bandwidth | 9GHz |
| Package/Case | VQFN EP |
| Data Rate | 11.3Gbps |
| Gain | 34dB |
| Gain Bandwidth Product | 9GHz |
| Lead Free | Lead Free |
| Max Input Voltage | 2V |
| Min Input Voltage | 5mV |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Min Output Voltage | 250mV |
| Max Power Dissipation | 170mW |
| Number of Circuits | 1 |
| Operating Supply Current | 50mA |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 170mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 50mA |
| Voltage Gain | 34dB |
| Weight | 0.00085oz |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments ONET8501PBRGTT Datasheet
Download the complete datasheet for Texas Instruments ONET8501PBRGTT to view detailed technical specifications.
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