Single P-channel enhancement-mode MOSFET for surface mount applications. Features a continuous drain current of 1.6A and a drain-to-source breakdown voltage of -15V. Offers a low on-state resistance of 180mR and fast switching times with a fall time of 10ns. Packaged in an 8-SOIC with dimensions of 4.9mm length, 3.91mm width, and 1.75mm height. Operates within a temperature range of -40°C to 125°C and is RoHS compliant.
PackageSOIC
Current Rating-1.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Texas Instruments TPS1100D technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
1.6A
Current Rating
-1.6A
Drain to Source Breakdown Voltage
-15V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
15V
Fall Time
10ns
Gate to Source Voltage (Vgs)
-15V
Height
1.75mm
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
1.6A
Max Power Dissipation
791mW
Mount
Surface Mount
Nominal Vgs
-1.25V
On-State Resistance
180mR
Output Voltage
-15V
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
791mW
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Thickness
1.58mm
Turn-Off Delay Time
13ns
Turn-On Delay Time
4.5ns
DC Rated Voltage
-15V
Width
3.91mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments TPS1100D Datasheet
Download the complete datasheet for Texas Instruments TPS1100D to view detailed technical specifications.
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