Single P-channel enhancement-mode MOSFET, surface mountable in an 8-SOIC package. Features a continuous drain current of 2.3A and a drain-to-source breakdown voltage of 15V. Offers a low on-resistance (Rds On Max) of 90mR. Operates within a temperature range of -40°C to 125°C, with a maximum power dissipation of 791mW. Includes fast switching characteristics with a fall time of 5.5ns and turn-off delay time of 19ns. RoHS compliant and lead-free.
PackageSOIC
Current Rating-2.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Texas Instruments TPS1101D technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
2.3A
Current Rating
-2.3A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
15V
Fall Time
5.5ns
Gate to Source Voltage (Vgs)
2V
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
791mW
Mount
Surface Mount
Nominal Vgs
-1.25V
Number of Elements
1
Output Current
2.3A
Output Voltage
-15V
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
791mW
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
19ns
Turn-On Delay Time
6.5ns
DC Rated Voltage
-15V
Compliance
RoHS
Compliant
Datasheet
Texas Instruments TPS1101D Datasheet
Download the complete datasheet for Texas Instruments TPS1101D to view detailed technical specifications.
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