PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power791mW
Quick Jump:
Technical Specifications
Texas Instruments TPS1101DG4 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 15V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 15V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 2V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 791mW |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 791mW |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 6.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments TPS1101DG4 Datasheet
Download the complete datasheet for Texas Instruments TPS1101DG4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
