Dual P-channel enhancement-mode MOSFET in an 8-SOIC package. Features a 15V Drain to Source Breakdown Voltage and 1.17A Continuous Drain Current. Offers a low Rds On Max of 180mR and a Gate to Source Voltage of 2V. Operates across a -40°C to 125°C temperature range with a Max Power Dissipation of 840mW. Surface mountable with fast switching times, including a 4.5ns Turn-On Delay Time.
PackageSOIC
Current Rating-1.7A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Texas Instruments TPS1120D technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
1.17A
Current Rating
-1.7A
Drain to Source Breakdown Voltage
15V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
15V
Fall Time
10ns
Gate to Source Voltage (Vgs)
2V
Lead Free
Lead Free
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
840mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
840mW
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Thickness
1.58mm
Threshold Voltage
-1.25V
Turn-Off Delay Time
13ns
Turn-On Delay Time
4.5ns
DC Rated Voltage
-15V
Compliance
RoHS
Compliant
Datasheet
Texas Instruments TPS1120D Datasheet
Download the complete datasheet for Texas Instruments TPS1120D to view detailed technical specifications.
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