The TPS1120DRG4 is a P-CHANNEL junction field-effect transistor with a maximum operating temperature range of -40°C to 125°C. It has a maximum power dissipation of 840mW and a continuous drain current of 1.17A. The device is packaged in a SOIC-8 package and is lead free, but contains lead. It is RoHS compliant and has a drain to source breakdown voltage of 15V.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power840mW
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Technical Specifications
Texas Instruments TPS1120DRG4 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.17A |
| Drain to Source Breakdown Voltage | 15V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 15V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 2V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 840mW |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 840mW |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 4.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments TPS1120DRG4 Datasheet
Download the complete datasheet for Texas Instruments TPS1120DRG4 to view detailed technical specifications.
No datasheet is available for this part.