Switching diode, dual series configuration, featuring 85V peak reverse repetitive voltage and 0.1A maximum continuous forward current. This silicon rectifier diode boasts a fast 4ns peak reverse recovery time and a low 3pF maximum diode capacitance. Housed in a 3-pin S-Mini package with gull-wing leads for surface mounting, it offers a compact 2.9mm x 1.5mm footprint and operates across a wide temperature range from -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 1SS226(DCC010-TB,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
Switching Diode
Configuration
Dual Series
Peak Reverse Repetitive Voltage
85V
Maximum Continuous Forward Current
0.1A
Peak Non-Repetitive Surge Current
2A
Peak Forward Voltage
1.2V
Peak Reverse Current
0.5uA
Peak Reverse Recovery Time
4ns
Maximum Diode Capacitance
3pF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operating Junction Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541100070
Schedule B
8541100070
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 1SS226(DCC010-TB,F Datasheet
Download the complete datasheet for Toshiba 1SS226(DCC010-TB,F to view detailed technical specifications.
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