The Toshiba 1SS302(T5RFUJITS,F is a dual series switching diode with a peak reverse repetitive voltage of 85V and a maximum continuous forward current of 0.1A. It has a peak non-repetitive surge current of 2A and a peak forward voltage of 1.2V. The diode is packaged in a SOT-323 surface mount package with a maximum power dissipation of 100mW. It operates over a temperature range of -55°C to 125°C.
PackageUSM
MountingSurface Mount
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Technical Specifications
Toshiba 1SS302(T5RFUJITS,F technical specifications.
General
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Type | Switching Diode |
| Configuration | Dual Series |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 4ns |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 1SS302(T5RFUJITS,F Datasheet
Download the complete datasheet for Toshiba 1SS302(T5RFUJITS,F to view detailed technical specifications.
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