The Toshiba 1SS399(T5LSIND,F) is a dual general purpose rectifier diode with a peak reverse repetitive voltage of 420V and a maximum continuous forward current of 0.1A. It has a peak non-repetitive surge current of 2A and a peak forward voltage of 1.3V. The diode's peak reverse recovery time is 500ns, and its maximum power dissipation is 150mW. The device is packaged in an SMQ package and is suitable for surface mount applications. The operating temperature range is from -55°C to 125°C.
PackageSMQ
MountingSurface Mount
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Technical Specifications
Toshiba 1SS399(T5LSIND,F) technical specifications.
General
| Package/Case | SMQ |
| Pin Count | 4 |
| PCB | 4 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Mounting | Surface Mount |
| Jedec | SC-61 |
| Type | Switching Diode |
| Configuration | Dual Parallel |
| Peak Reverse Repetitive Voltage | 420V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | 1.3V |
| Peak Reverse Current | 0.1uA |
| Peak Reverse Recovery Time | 500(Typ)ns |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 1SS399(T5LSIND,F) Datasheet
Download the complete datasheet for Toshiba 1SS399(T5LSIND,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.