PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 120V and a maximum DC collector current of 0.1A. Offers a maximum power dissipation of 150mW and a minimum DC current gain of 350 at 2mA/6V. Operates within a temperature range of -55°C to 125°C. Packaged in a 3-pin S-Mini (SOT-23) plastic housing with gull-wing leads.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1163GR(T5RMATU1 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
350@2mA@6V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SA1163GR(T5RMATU1 Datasheet
Download the complete datasheet for Toshiba 2SA1163GR(T5RMATU1 to view detailed technical specifications.
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