The 2SA1242-Y(Q) is a PNP bipolar junction transistor from Toshiba with a maximum collector current of 5A and a maximum power dissipation of 1W. It features a gain bandwidth product of 170MHz and a maximum operating temperature of 150°C. The transistor is packaged in a TO-252-3 surface mount package and is lead free. It is suitable for use in high-frequency applications.
PackageTO-252-3
MountingSurface Mount
PolarityPNP
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Technical Specifications
Toshiba 2SA1242-Y(Q) technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 8V |
| Gain Bandwidth Product | 170MHz |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Transition Frequency | 170MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1242-Y(Q) Datasheet
Download the complete datasheet for Toshiba 2SA1242-Y(Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.