PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features an 8V collector-emitter voltage and 0.03A maximum collector current. This single-element transistor is housed in a 3-pin S-Mini package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operating temperature range is -55°C to 125°C, with a maximum power dissipation of 150mW.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1245(TE85L,F) technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
15V
Maximum Emitter Base Voltage
2V
Maximum Collector-Emitter Voltage
8V
Maximum DC Collector Current
0.03A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
20@10mA@5V
Maximum Transition Frequency
4000(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SA1245(TE85L,F) Datasheet
Download the complete datasheet for Toshiba 2SA1245(TE85L,F) to view detailed technical specifications.
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