
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features an 8V collector-emitter voltage and 0.03A continuous collector current. Housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a maximum power dissipation of 150mW and a minimum DC current gain of 20 at 10mA/5V. Maximum transition frequency is 4000MHz (typical).
Toshiba 2SA1245(TE85R) technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 15V |
| Maximum Emitter Base Voltage | 2V |
| Maximum Collector-Emitter Voltage | 8V |
| Maximum DC Collector Current | 0.03A |
| Maximum Power Dissipation | 150mW |
| Material | Si |
| Minimum DC Current Gain | 20@10mA@5V |
| Maximum Transition Frequency | 4000(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SA1245(TE85R) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.