PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 200V collector-emitter voltage and 0.05A continuous collector current. This single-element transistor is housed in a compact 3-pin S-MINI plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. It offers a minimum DC current gain of 120 at 10mA/3V and a typical transition frequency of 100MHz, operating across a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1255Y(T5RMDNSII technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | S-MINI |
| Package/Case | S-Mini |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.5 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.012 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 200V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 200V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 150mW |
| Material | Si |
| Minimum DC Current Gain | 120@10mA@3V |
| Maximum Transition Frequency | 100(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SA1255Y(T5RMDNSII Datasheet
Download the complete datasheet for Toshiba 2SA1255Y(T5RMDNSII to view detailed technical specifications.
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