PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 250V and a continuous collector current of 0.05A. This single-element silicon transistor is housed in a 3-pin TO-92 plastic package, suitable for through-hole mounting. Key specifications include a maximum power dissipation of 600mW and a minimum DC current gain of 50. The transition frequency is typically 80MHz, with a maximum operating temperature of 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1320(T2CANO) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.8
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
250V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
250V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
600mW
Material
Si
Minimum DC Current Gain
50@25mA@20V
Maximum Transition Frequency
80(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA1320(T2CANO) Datasheet
Download the complete datasheet for Toshiba 2SA1320(T2CANO) to view detailed technical specifications.
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