PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 2A. This single-element transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. Key specifications include a maximum power dissipation of 900mW and a transition frequency of 110MHz (typical).
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1382(T6ND,C) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
2A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
110(Typ)MHz
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA1382(T6ND,C) Datasheet
Download the complete datasheet for Toshiba 2SA1382(T6ND,C) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.