PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 50V collector-emitter voltage and 2A continuous collector current. This single-element transistor offers a maximum power dissipation of 900mW and a transition frequency of 110MHz. Housed in a 3-pin TO-92 Mod plastic package with dimensions up to 5.1mm x 4.1mm x 8.2mm.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1382(T6NISSA) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 Mod |
| Package Description | Plastic Header Style Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 8.2(Max) |
| Seated Plane Height (mm) | 10.4(Max) |
| Package Weight (g) | 0.36 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 900mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|[email protected]@2V |
| Maximum Transition Frequency | 110(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SA1382(T6NISSA) Datasheet
Download the complete datasheet for Toshiba 2SA1382(T6NISSA) to view detailed technical specifications.
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