PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 300V collector-emitter voltage and 0.1A maximum DC collector current. Housed in a compact PW-Mini surface-mount package with 4 pins (3+Tab), measuring 4.6mm (Max) length, 2.5mm width, and 1.6mm (Max) height. Offers a minimum DC current gain of 50 at 20mA and 10V, with a typical transition frequency of 70MHz. Operates across a wide temperature range from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1384O(T2LMDNI,C technical specifications.
General
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
300V
Maximum Emitter Base Voltage
8V
Maximum Collector-Emitter Voltage
300V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
50@20mA@10V
Maximum Transition Frequency
70(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA1384O(T2LMDNI,C Datasheet
Download the complete datasheet for Toshiba 2SA1384O(T2LMDNI,C to view detailed technical specifications.
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