PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage and 3A continuous collector current. Surface mountable in a compact PW-Mini package with 4 pins (3+Tab). Maximum power dissipation is 1000mW. Silicon material with a minimum DC current gain of 120 at 100mA, 2V. Operates across a wide temperature range from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SA1736(T2LTOYOG) technical specifications.
General
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
120@100mA@2V|40@2A@2V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA1736(T2LTOYOG) Datasheet
Download the complete datasheet for Toshiba 2SA1736(T2LTOYOG) to view detailed technical specifications.
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