PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 230V. Offers a transition frequency of 70MHz and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C.
Frequency70MHz
PackageTO-220-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1837(F,M) technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
230V
Collector Emitter Breakdown Voltage
230V
Collector Emitter Voltage (VCEO)
230V
Collector-emitter Voltage-Max
1.5V
Contact Plating
Copper, Tin, Silver
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
70MHz
Lead Free
Lead Free
Max Collector Current
1A
Max Frequency
70MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Transition Frequency
70MHz
DC Rated Voltage
-230V
Compliance
RoHS
Compliant
Datasheet
Toshiba 2SA1837(F,M) Datasheet
Download the complete datasheet for Toshiba 2SA1837(F,M) to view detailed technical specifications.
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