The 2SA1932(TP,Q) is a NPN bipolar junction transistor from Toshiba with a collector-emitter breakdown voltage of 230V and a maximum collector current of 1A. It features a TO-220-3 package and is mounted through a hole. The transistor has a maximum power dissipation of 1.8W and a transition frequency of 70MHz. It is available in a tape and reel packaging with a quantity of 1000 units.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1932(TP,Q) technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 230V |
| Collector-emitter Voltage-Max | 1.5V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1.8W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Transition Frequency | 70MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SA1932(TP,Q) Datasheet
Download the complete datasheet for Toshiba 2SA1932(TP,Q) to view detailed technical specifications.
No datasheet is available for this part.