PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 230V and a maximum DC collector current of 1A. This single-element transistor offers a minimum DC current gain of 100 at 100mA/5V and a typical transition frequency of 70MHz. Housed in a 3-pin SIP plastic package with dimensions of 10mm (length) x 4.5mm (width) x 13.4mm (height), it operates within a temperature range of -55°C to 150°C.
PackageSIP
MountingThrough Hole
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Technical Specifications
Toshiba 2SA1932(TPPAIO) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | SIP |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 13.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 230V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 230V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 1800mW |
| Material | Si |
| Minimum DC Current Gain | 100@100mA@5V |
| Maximum Transition Frequency | 70(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SA1932(TPPAIO) Datasheet
Download the complete datasheet for Toshiba 2SA1932(TPPAIO) to view detailed technical specifications.
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