PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V maximum collector-emitter voltage and 2.5A maximum DC collector current. Single element configuration with a 3-pin TSM package, measuring 2.9mm x 1.6mm x 0.7mm. Offers a minimum DC current gain of 200 at 0.5A at 2V and 100 at 1.6A at 2V. Operating temperature range from -55°C to 150°C.
PackageTSM
MountingSurface Mount
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Technical Specifications
Toshiba 2SA2061(T5LITD) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | TSM |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 0.7 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 20V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum DC Collector Current | 2.5A |
| Maximum Power Dissipation | 625mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@2V|[email protected]@2V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SA2061(T5LITD) Datasheet
Download the complete datasheet for Toshiba 2SA2061(T5LITD) to view detailed technical specifications.
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