PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 30V collector-emitter voltage and 0.5A continuous collector current. This single-element silicon transistor is housed in a 3-pin TO-92 plastic package suitable for through-hole mounting. Key specifications include a maximum power dissipation of 500mW and a transition frequency of 200MHz.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SA562TM-Y(F,T) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 35V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 500mW |
| Material | Si |
| Minimum DC Current Gain | 120@100mA@1V|40@400mA@6V |
| Maximum Transition Frequency | 200(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SA562TM-Y(F,T) Datasheet
Download the complete datasheet for Toshiba 2SA562TM-Y(F,T) to view detailed technical specifications.
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