PNP Bipolar Junction Transistor (BJT) for general-purpose applications. Features 80V collector-emitter voltage and 0.3A continuous collector current. Housed in a 3-pin TO-92 plastic package with through-hole mounting. Offers a minimum DC current gain of 120 at 50mA and 2V, with a typical transition frequency of 100MHz. Maximum power dissipation is 600mW, suitable for operation up to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SA817-Y(TE2,M) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.8
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
600mW
Material
Si
Minimum DC Current Gain
120@50mA@2V
Maximum Transition Frequency
100(Typ)MHz
Category
Bipolar Small Signal
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SA817-Y(TE2,M) Datasheet
Download the complete datasheet for Toshiba 2SA817-Y(TE2,M) to view detailed technical specifications.
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