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Technical Specifications
Toshiba 2SB1067(LB,KMATU) technical specifications.
General
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 8V |
| Maximum Continuous DC Collector Current | 2A |
| Maximum Power Dissipation | 1500mW |
| Maximum Base Emitter Saturation Voltage | 2@1mA@1AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@1mA@1AV |
| Minimum DC Current Gain | 2000@1A@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SB1067(LB,KMATU) Datasheet
Download the complete datasheet for Toshiba 2SB1067(LB,KMATU) to view detailed technical specifications.
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