PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 60V and a continuous collector current of 3A. Packaged in a TO-220SM with 3 pins and a tab, this single-element silicon transistor offers a minimum DC current gain of 20 at 3A/5V and a maximum power dissipation of 1500mW. Operating temperature range is -55°C to 150°C.
PackageTO-220SM
MountingSurface Mount
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Technical Specifications
Toshiba 2SB1667(T4LYAZB) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.1 |
| Package Height (mm) | 4.7(Max) |
| Package Weight (g) | 1.4 |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1500mW |
| Material | Si |
| Minimum DC Current Gain | 20@3A@5V |
| Maximum Transition Frequency | 9(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SB1667(T4LYAZB) Datasheet
Download the complete datasheet for Toshiba 2SB1667(T4LYAZB) to view detailed technical specifications.
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