PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a TO-220AB package with 3 pins and a tab, designed for single element configuration. Delivers a maximum collector-emitter voltage of 50V and a continuous collector current of 7A, with a maximum power dissipation of 1500mW. Offers a minimum DC current gain of 120 at 1A and 1V, and a typical transition frequency of 10MHz. Constructed from silicon with a plastic package material.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SB553-Y(FJTN,Z) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 8.6(Max) |
| Seated Plane Height (mm) | 20.9(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 70V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 7A |
| Maximum Power Dissipation | 1500mW |
| Material | Si |
| Minimum DC Current Gain | 120@1A@1V |
| Maximum Transition Frequency | 10(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SB553-Y(FJTN,Z) Datasheet
Download the complete datasheet for Toshiba 2SB553-Y(FJTN,Z) to view detailed technical specifications.
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