NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 50V collector-emitter voltage, 0.15A maximum collector current, and 400mW power dissipation. This single-element silicon transistor is housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Minimum DC current gain is 200 at 2mA and 6V, with a maximum transition frequency of 80MHz. Operating temperature range is -55°C to 125°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SC1815GR(TP2MBSH2 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.8
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.15A
Maximum Power Dissipation
400mW
Material
Si
Minimum DC Current Gain
200@2mA@6V
Maximum Transition Frequency
80(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC1815GR(TP2MBSH2 Datasheet
Download the complete datasheet for Toshiba 2SC1815GR(TP2MBSH2 to view detailed technical specifications.
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