NPN RF BJT transistor, single element, silicon material, designed for through-hole mounting. Features a 3-pin TO-92 plastic package with formed leads. Maximum collector-emitter voltage is 45V, with a maximum DC collector current of 0.05A and 300mW power dissipation. Minimum DC current gain ranges from 30 to 50, with a minimum transition frequency of 300MHz. Operating temperature range is -55°C to 125°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2216(TPE2,SAN,F technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max) + 1.8
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
45V
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
4V
Maximum DC Collector Current
0.05A
Maximum Power Dissipation
300mW
Minimum DC Current Gain
[email protected]@12.5V
Minimum DC Current Gain Range
30 to 50
Maximum Collector-Emitter Saturation Voltage
[email protected]@15mAV
Maximum Base Emitter Saturation Voltage
[email protected]@15mAV
Maximum Transition Frequency
300(Min)MHz
Typical Output Capacitance
2(Max)pF
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
12.5V/12.5mA
Typical Power Gain
29(Min)dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC2216(TPE2,SAN,F Datasheet
Download the complete datasheet for Toshiba 2SC2216(TPE2,SAN,F to view detailed technical specifications.
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