NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 0.15A. Offers a maximum power dissipation of 200mW and a minimum DC current gain of 200. This single-element transistor is housed in a 3-pin plastic package with through-hole mounting and a pin pitch of 1.27mm. Operates across a temperature range of -55°C to 125°C.
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2458-GR(TE4,F,T technical specifications.
General
| Basic Package Type | Through Hole |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Seated Plane Height (mm) | 3.2(Max) + 1.8 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 200mW |
| Material | Si |
| Minimum DC Current Gain | 200@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC2458-GR(TE4,F,T Datasheet
Download the complete datasheet for Toshiba 2SC2458-GR(TE4,F,T to view detailed technical specifications.
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