NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 300V and a maximum DC collector current of 0.1A. This single-element silicon transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. Key specifications include a maximum power dissipation of 900mW and a minimum DC current gain of 20. Operating temperature range is -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2482(F,M) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
300V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
300V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
20@4mA@10V|30@20mA@10V
Maximum Transition Frequency
50(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC2482(F,M) Datasheet
Download the complete datasheet for Toshiba 2SC2482(F,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.