NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 300V and a maximum DC collector current of 0.1A. This single-element transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. Maximum power dissipation is 900mW, with a minimum DC current gain of 20. Operating temperature range is -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2482(TP6JVC1,C) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
300V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
300V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
20@4mA@10V|30@20mA@10V
Maximum Transition Frequency
50(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC2482(TP6JVC1,C) Datasheet
Download the complete datasheet for Toshiba 2SC2482(TP6JVC1,C) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.