NPN RF Bipolar Junction Transistor (BJT) designed for through-hole mounting. Features a 20V maximum collector-emitter voltage and 0.05A maximum DC collector current. This single-element silicon transistor offers a minimum DC current gain of 30 at 10mA and 10V, with a typical transition frequency of 350MHz. Housed in a 3-pin TO-92 plastic package, it supports a maximum power dissipation of 300mW and operates up to 125°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2498(MSPR,F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 30@10mA@10V |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Transition Frequency | 350(Typ)MHz |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SC2498(MSPR,F) Datasheet
Download the complete datasheet for Toshiba 2SC2498(MSPR,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.