NPN RF BJT transistor, single element, silicon material, designed for through-hole mounting. Features a 3-pin TO-92 plastic package with formed leads, measuring 5.1mm(Max) L x 4.1mm(Max) W x 4.7mm(Max) H. Operates with a maximum collector-emitter voltage of 20V, maximum collector current of 0.05A, and maximum power dissipation of 300mW. Exhibits a minimum DC current gain of 30 at 10mA/10V and a typical transition frequency of 350MHz, with an operating temperature range up to 125°C.
Toshiba 2SC2498(TPE2PAIO-K technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Lead Shape | Formed |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Material | Si |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 30@10mA@10V |
| Minimum DC Current Gain Range | 30 to 50 |
| Maximum Transition Frequency | 350(Typ)MHz |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SC2498(TPE2PAIO-K to view detailed technical specifications.
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