NPN bipolar junction transistor (BJT) for through-hole mounting. Features a TO-220AB package with 3 pins and a tab, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 2A. Maximum power dissipation is 1500mW, with a minimum DC current gain of 8 at 1A/5V. Operating temperature range extends to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SC2552(NIPO-1) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
8.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
500V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1500mW
Material
Si
Minimum DC Current Gain
8@1A@5V|[email protected]@5V
Category
Bipolar Power
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC2552(NIPO-1) Datasheet
Download the complete datasheet for Toshiba 2SC2552(NIPO-1) to view detailed technical specifications.
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