NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 50V collector-emitter voltage, 0.15A maximum collector current, and 150mW power dissipation. This single-element silicon transistor is housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operating temperature range is -55°C to 125°C, with a minimum DC current gain of 200.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC2712GR(T5RFUSHA technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
50V
Maximum DC Collector Current
0.15A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
200@2mA@6V
Maximum Transition Frequency
80(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
No
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Toshiba 2SC2712GR(T5RFUSHA Datasheet
Download the complete datasheet for Toshiba 2SC2712GR(T5RFUSHA to view detailed technical specifications.
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