NPN RF Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage and 0.02A DC collector current. Offers a maximum power dissipation of 100mW and a typical transition frequency of 550MHz. Packaged in a 3-pin S-Mini (SOT-23) lead-frame SMT with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Operates within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC2714O(5LFA200,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Material
Si
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage
30V
Maximum Collector Base Voltage
40V
Maximum Emitter Base Voltage
4V
Maximum DC Collector Current
0.02A
Maximum Power Dissipation
100mW
Minimum DC Current Gain
70@1mA@6V
Minimum DC Current Gain Range
50 to 120
Maximum Transition Frequency
550(Typ)MHz
Maximum Noise Figure
5dB
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Operational Bias Conditions
6V/1mA
Typical Power Gain
23dB
Compliance
Cage Code
S0562
EU RoHS
Yes
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC2714O(5LFA200,F Datasheet
Download the complete datasheet for Toshiba 2SC2714O(5LFA200,F to view detailed technical specifications.
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