NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage, 0.5A maximum collector current, and 150mW power dissipation. This single-element transistor is housed in a 3-pin S-Mini plastic package with gull-wing leads, measuring 2.9mm x 1.5mm x 1.1mm. Offers a minimum DC current gain of 120 at 100mA/1V and a typical transition frequency of 300MHz. Operates within a temperature range of -55°C to 125°C.
PackageS-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC2859Y(T5RFA20,F technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
S-MINI
Package/Case
S-Mini
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.5
Package Height (mm)
1.1
Seated Plane Height (mm)
1.15
Pin Pitch (mm)
0.95
Package Weight (g)
0.012
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
35V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
0.5A
Maximum Power Dissipation
150mW
Material
Si
Minimum DC Current Gain
120@100mA@1V|40@400mA@6V
Maximum Transition Frequency
300(Typ)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
125°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SC2859Y(T5RFA20,F Datasheet
Download the complete datasheet for Toshiba 2SC2859Y(T5RFA20,F to view detailed technical specifications.
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