NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 120V collector-emitter voltage and 0.8A continuous collector current. Packaged in a compact PW-Mini surface-mount configuration with 4 pins (3+Tab). Offers a maximum power dissipation of 1000mW and a minimum DC current gain of 120. Operates across a wide temperature range from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SC2881-Y(T12LHG,C technical specifications.
General
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
120V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
120V
Maximum DC Collector Current
0.8A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
120@100mA@5V
Maximum Transition Frequency
120(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC2881-Y(T12LHG,C Datasheet
Download the complete datasheet for Toshiba 2SC2881-Y(T12LHG,C to view detailed technical specifications.
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