The Toshiba 2SC3074-O(LB) is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and maximum DC collector current of 5A. It features a maximum power dissipation of 1000mW and a minimum DC current gain of 70 at 1A and 1V. The transistor is packaged in an IPAK package with a PW-Mold case and is suitable for through-hole mounting. It has a maximum operating temperature of 150 degrees Celsius.
PackagePW-Mold
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SC3074-O(LB) technical specifications.
General
| Package Family Name | IPAK |
| Package/Case | PW-Mold |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.8(Max) |
| Package Width (mm) | 2.5(Max) |
| Package Height (mm) | 5.5 |
| Pin Pitch (mm) | 2.3 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 70@1A@1V |
| Maximum Transition Frequency | 120(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC3074-O(LB) Datasheet
Download the complete datasheet for Toshiba 2SC3074-O(LB) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.