NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 0.8A. This single-element transistor is housed in a surface-mount TO-252AB (New PW-Mold) package with 3 pins and a tab. Maximum power dissipation is 1000mW, with a minimum DC current gain of 20 at 0.1A/5V. Operating temperature range is -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SC3075(TE16L1,N) technical specifications.
General
Package/Case
New PW-Mold
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Package Weight (g)
0.36
Mounting
Surface Mount
Jedec
TO-252AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
500V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
0.8A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SC3075(TE16L1,N) Datasheet
Download the complete datasheet for Toshiba 2SC3075(TE16L1,N) to view detailed technical specifications.
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